DMN2028UFU-7

$0.54

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-

SKU:bdd2f8bd6212 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.5A
Rds On (Max) @ Id, Vgs：20.2mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds：887pF @ 10V
Power - Max：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UFDFN Exposed Pad
Supplier Device Package：U-DFN2030-6 (Type B)
Grade：-
Qualification：-

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DMN2028UFU-7

Overview

The DMN2028UFU-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 surface-mount package designed for high-efficiency power management applications. The device provides a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 7.5A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified at 20.2mΩ maximum when VGS = 4.5V, and 23.5mΩ maximum when VGS = 2.5V. Total gate charge (Qg) is typically 10nC at VGS = 4.5V. Thermal resistance from junction to ambient is 144°C/W under steady-state conditions on an FR-4 substrate.

Feature Summary

Dual N-channel configuration with integrated gate protection diodes
Optimized low on-state resistance for high efficiency
Low input capacitance supporting fast switching speeds
Totally lead-free and fully RoHS compliant construction

Applications

Power Management Functions
Battery Pack Protection
Load Switching Circuits

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The -7 suffix indicates a 3000-unit tape and reel packaging format. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, prior to finalizing supply chain agreements.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution within a 20V voltage rating. Ensure the application gate drive voltage supports the specified RDS(ON) thresholds at 4.5V or 2.5V. Verify that the thermal design accommodates the 144°C/W junction-to-ambient resistance for the intended duty cycle and PCB copper area.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. These devices are engineered to minimize conduction losses while maintaining superior switching performance. The series targets portable electronics and battery-powered systems where space constraints and power efficiency are critical design parameters.