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The DMN2041UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a maximum continuous drain current of 5.8A at +25°C. Static drain-source on-resistance is specified as 28mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Total gate charge is 9.1nC, with input capacitance at 689pF. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements, before finalizing procurement orders.
Select this component when a dual N-channel MOSFET is required in a TSOT26 package. Ensure the application voltage does not exceed 20V and that the thermal design accommodates the specified junction-to-ambient resistance values under expected load conditions.
This part belongs to the DMN2041 series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power management applications requiring compact surface-mount solutions.
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.