DMN2041UVT-13

DMN2041UVT-13

$0.09
  • Description:MOSFET 2N-CH 20V 5.8A TSOT26
  • Series:-

SKU:055bbedac04e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 5.8A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
  • Rds On (Max) @ Id, Vgs:28mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:689pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:-
  • Qualification:-

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DMN2041UVT-13

Overview

The DMN2041UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. The device provides a maximum continuous drain current of 5.8A at +25°C. Static drain-source on-resistance is specified as 28mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Total gate charge is 9.1nC, with input capacitance at 689pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration for compact power management solutions
  • Low on-resistance optimized for high efficiency applications
  • Fast switching speed supported by low input capacitance
  • Totally lead-free and fully RoHS compliant construction

Applications

  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements, before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a TSOT26 package. Ensure the application voltage does not exceed 20V and that the thermal design accommodates the specified junction-to-ambient resistance values under expected load conditions.

Part Context

This part belongs to the DMN2041 series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is intended for high-efficiency power management applications requiring compact surface-mount solutions.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.

DMN2041UVT-13DMN2041UVT-13
$0.09
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