DMN2041UVT-7

DMN2041UVT-7

$0.50
  • Description:MOSFET 2N-CH 20V 5.8A TSOT26
  • Series:-

SKU:e9c640a22f12 Category: Brand:

  
  • Quantity
    • -
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 5.8A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
  • Rds On (Max) @ Id, Vgs:28mOhm @ 8.2A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:689pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:-
  • Qualification:-

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DMN2041UVT-7

Overview

The DMN2041UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and provides a drain-source voltage (BVDSS) of 20V. The device offers a maximum on-resistance (RDS(ON)) of 28mΩ at VGS = 4.5V and 32mΩ at VGS = 2.5V, supporting continuous drain currents up to 5.8A at +25°C. Key electrical parameters include an input capacitance of 689pF, total gate charge of 9.1nC, and a junction-to-ambient thermal resistance of 113°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration in a compact TSOT26 surface-mount package
  • Optimized for low on-state resistance while maintaining superior switching performance
  • Totally lead-free and fully RoHS compliant with halogen and antimony-free green materials

Applications

  • Backlighting circuits
  • DC-DC converters
  • Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation before purchase. The -7 suffix indicates tape and reel packaging containing 3000 units per reel. Confirm that the component meets all required environmental standards, including RoHS compliance and moisture sensitivity level 1 per J-STD-020 specifications.

Selection Notes

Select this component for high-efficiency power management applications requiring low conduction losses. Ensure the design accommodates the 20V drain-source voltage limit and the 5.8A continuous current rating at +25°C. Consider the thermal resistance characteristics when designing PCB layouts for adequate heat dissipation under steady-state conditions.

Part Context

This part belongs to the DMN2041 series of dual N-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution to minimize on-state resistance without compromising switching speed. The device is intended for use in space-constrained applications where efficient power handling is critical.

Replacement Considerations

Direct replacements must match the dual N-channel topology, 20V BVDSS, and TSOT26 package dimensions. Verify equivalent RDS(ON) values and thermal characteristics to ensure circuit compatibility. Consult manufacturer cross-reference lists for confirmed alternative part numbers.

FAQ

What is the maximum continuous drain current for the DMN2041UVT?

The maximum continuous drain current is 5.8A at a case temperature of +25°C.

Is the DMN2041UVT suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact Diodes Incorporated directly or your local representative.

What is the typical input capacitance of this device?

The typical input capacitance (Ciss) is 689pF, measured at VDS = 10V and VGS = 0V.

DMN2041UVT-7DMN2041UVT-7
$0.50
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