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The DMN2041UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and provides a drain-source voltage (BVDSS) of 20V. The device offers a maximum on-resistance (RDS(ON)) of 28mΩ at VGS = 4.5V and 32mΩ at VGS = 2.5V, supporting continuous drain currents up to 5.8A at +25°C. Key electrical parameters include an input capacitance of 689pF, total gate charge of 9.1nC, and a junction-to-ambient thermal resistance of 113°C/W. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation before purchase. The -7 suffix indicates tape and reel packaging containing 3000 units per reel. Confirm that the component meets all required environmental standards, including RoHS compliance and moisture sensitivity level 1 per J-STD-020 specifications.
Select this component for high-efficiency power management applications requiring low conduction losses. Ensure the design accommodates the 20V drain-source voltage limit and the 5.8A continuous current rating at +25°C. Consider the thermal resistance characteristics when designing PCB layouts for adequate heat dissipation under steady-state conditions.
This part belongs to the DMN2041 series of dual N-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution to minimize on-state resistance without compromising switching speed. The device is intended for use in space-constrained applications where efficient power handling is critical.
Direct replacements must match the dual N-channel topology, 20V BVDSS, and TSOT26 package dimensions. Verify equivalent RDS(ON) values and thermal characteristics to ensure circuit compatibility. Consult manufacturer cross-reference lists for confirmed alternative part numbers.
The maximum continuous drain current is 5.8A at a case temperature of +25°C.
For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact Diodes Incorporated directly or your local representative.
The typical input capacitance (Ciss) is 689pF, measured at VDS = 10V and VGS = 0V.