DMN2044UCB4-7

$0.74

Description：MOSFET N-CH 20V 3.3A U-WLB1010-4
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:657be7cd1b4f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2044UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3.3A U-WLB1010-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2044UCB4-7

Description：MOSFET N-CH 20V 3.3A U-WLB1010-4
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：720mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-WLB1010-4
Package / Case：4-UFBGA, WLBGA

Single FETs, MOSFETs datasheet and documents for DMN2044UCB4-7

DMN2044UCB4-7

Single FETs, MOSFETs Overview

The DMN2044UCB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-WLB1010-4 package. It features a drain-source voltage (V_DSS) of 20 V and a maximum continuous drain current (I_D) of 4.5 A at +25°C. The device offers a low on-resistance (R_DS(ON)) of 40 mΩ at V_GS = 4.5 V and 1.5 A. Gate threshold voltage (V_GS(TH)) ranges from 0.4 V to 0.9 V. Total gate charge (Q_g) is 13.1 nC at V_GS = 4.5 V. Operating temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-small 1.0mm x 1.0mm package design for space-constrained applications
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free "Green" device formulation

Single FETs, MOSFETs Applications

Portable Applications
Load Switch
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix "-7" corresponds to the 3000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required moisture sensitivity level per J-STD-020 standards before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with high efficiency switching capabilities is required. The low R_DS(ON) across various gate voltages supports efficient power management. Ensure the application voltage does not exceed the 20 V drain-source rating and consider thermal resistance values for heat dissipation planning.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2044 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product is classified under transistors within the semiconductor discrete category.