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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
- Power - Max：820mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2053UFDBQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device provides a drain-source breakdown voltage (BVDSS) of 20V and a continuous drain current (ID) of 4.6A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 35mΩ at VGS = 4.5V and ID = 5A, or 43mΩ at VGS = 2.5V and ID = 4A. Total gate charge (Qg) is 3.6nC at VGS = 4.5V and 7.7nC at VGS = 10V.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Low profile construction with a maximum height of 0.6mm
- Totally lead-free and fully RoHS compliant with halogen- and antimony-free green materials
- Suitable for automotive applications requiring specific change control
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the ordering suffix -13 to confirm the tape and reel packing quantity of 10,000 units. Ensure the component meets AEC-Q101 qualification requirements if used in automotive contexts. Confirm compliance with IATF 16949 manufacturing standards. Check for UL flammability classification rating 94V-0 on the molding compound. Validate moisture sensitivity level 1 per J-STD-020 before assembly.
Selection Notes
Select this component when a compact dual N-channel MOSFET is required for low-voltage switching. The U-DFN2020-6 package offers a small footprint suitable for space-constrained designs. Evaluate RDS(ON) performance at the specific gate drive voltage intended for the application. Consider thermal resistance values based on the copper area available on the PCB substrate.
Part Context
This part belongs to the DMN2053 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but differs in packaging and packing quantities. The UFDBQ designation indicates the specific U-DFN2020-6 Type B package configuration.
Replacement Considerations
DMN2053UFDBQ-7 is a direct substitute with identical electrical specifications and package type, differing only in the tape and reel packing quantity of 3,000 units.
