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DMN2056U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CHANNEL 20V 4A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2056U-7
- Description：MOSFET N-CHANNEL 20V 4A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：38mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：339 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：940mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2056U-7
Single FETs, MOSFETs Overview
The DMN2056U-7 is a 20V N-channel enhancement mode MOSFET in an SOT-23 package. It features a maximum drain-source on-resistance of 38mΩ at VGS=4.5V and 45mΩ at VGS=2.5V. The device supports a continuous drain current of 4.0A at +25°C and 3.7A at VGS=2.5V. Gate threshold voltage ranges from 0.4V to 1.0V. Total gate charge is typically 4.3nC. Power dissipation reaches 0.94W with thermal resistance of 136°C/W under specific mounting conditions. Operating temperature spans -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- Totally lead-free and fully RoHS compliant
- Qualified to JEDEC standards for high reliability
Single FETs, MOSFETs Applications
- Battery charging systems
- Power management functions
- DC-DC converters
- Portable power adaptors
Single FETs, MOSFETs Procurement Notes
Verify the component matches the exact Diodes Incorporated part number DMN2056U-7. Confirm the SOT-23 standard case and tape & reel packaging specifications align with production requirements. Ensure compliance with RoHS, Lead-Free, and Halogen/Antimony Free definitions as specified by the manufacturer. Validate that the sourcing channel provides original manufacturer documentation.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring low conduction losses and fast switching within a 20V limit. The low gate threshold voltage facilitates drive compatibility with various logic levels. Evaluate thermal performance against the specified junction-to-ambient resistance values based on the intended PCB copper layout and operating environment constraints.
Single FETs, MOSFETs Part Context
This device belongs to the DMN2056U series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology housed in a molded plastic SOT-23 case. The product summary indicates optimization for minimizing on-state resistance while maintaining superior switching performance characteristics suitable for compact electronic designs.
Single FETs, MOSFETs Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with Q-suffixes listed by the manufacturer.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
