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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.455A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：455mA (Ta)
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.41nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：31pF @ 15V
- Power - Max：310mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X2-DFN0806-6
- Grade：-
- Qualification：-
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Overview
The DMN21D1UDA-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 455 mA at +25°C. The device offers low on-state resistance, with a maximum R_DS(ON) of 0.99 Ω at V_GS = 4.5 V and 1.2 Ω at V_GS = 2.5 V. It operates within a temperature range of -55°C to +150°C and has a total power dissipation of 310 mW. The component is housed in an X2-DFN0806-6 package.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Ultra-small surface mount package measuring 0.8mm x 0.6mm
- Low gate threshold voltage supporting low-voltage drive scenarios
- ESD protected gates integrated into the design
Applications
- General purpose interfacing switches
- Power management functions
- Analog switching circuits
Procurement Notes
Verify the specific ordering suffix '-7B' against official documentation to confirm packaging details, as standard datasheets may list generic part numbers without suffix specifications. Ensure compatibility with RoHS 2 and REACH directives if environmental compliance is required for the target application.
Selection Notes
Select this component when space constraints require an ultra-small footprint like the X2-DFN0806-6 package. It is suitable for applications needing low on-resistance at low gate voltages, such as 1.5 V or 2.5 V logic levels, while maintaining fast switching speeds for efficient power control.
Part Context
This dual MOSFET belongs to Diodes Incorporated's DMN series, which focuses on miniaturization and efficiency. The 'UDA' designation typically indicates a dual configuration in the X2-DFN0806-6 package, distinguishing it from single-channel variants or other package types within the broader product family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings before considering any alternative components from different manufacturers.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage (V_GSS) rating is ±8 V.
Does the device include internal protection features?
Yes, the DMN21D1UDA includes ESD protected gates for each channel.
What is the typical input capacitance?
The typical input capacitance (C_iss) is 31 pF, measured at V_DS = 15 V and f = 1.0 MHz.
