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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V X4-DSN3221-10
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Source
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Ta)
- Rds On (Max) @ Id, Vgs：4mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：40.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：3490pF @ 12V
- Power - Max：960mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：10-SMD, No Lead
- Supplier Device Package：X4-DSN3221-10
- Grade：-
- Qualification：-
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Overview
The DMN22M5UCA10-7 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a source-source configuration with a breakdown voltage of 24V and a maximum continuous source current of 26.5A at +25°C. The device achieves a typical on-resistance of 3.1mΩ at VGS = 3.8V. Packaged in the X4-DSN3221-10 footprint measuring 3.20mm × 2.10mm, it offers a low profile height of 0.120mm. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual independent channels integrated into a compact CSP package
- Integrated gate protection diodes for enhanced ESD robustness
- Low-profile design optimized for space-constrained applications
Applications
- Battery Management Systems
- Load Switching Circuits
- Battery Protection Modules
Procurement Notes
Verify component authenticity by checking the marking code against the date code key provided in the datasheet. Confirm the ordering suffix matches the required tape and reel quantity. Ensure the specific package variant aligns with the PCB pad layout requirements before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-current dual-channel solution is required. Evaluate thermal resistance values based on the specific copper area available on the PCB. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance performance level.
Part Context
This part belongs to Diodes Incorporated's advanced MOSFET portfolio, specifically engineered to minimize on-state resistance while maintaining switching performance. It utilizes the X4-DSN series packaging technology to provide a small form factor suitable for modern electronic designs requiring high power density.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing electrical specifications and pin configurations.
