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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 2.11A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.11A (Ta)
- Rds On (Max) @ Id, Vgs：195mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：135.2pF @ 0V
- Power - Max：530mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN
- Supplier Device Package：X2-DFN1310-6
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2300UFL4Q-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features an X2-DFN1310-6 package with a footprint of 1.3mm² and a profile of 0.4mm. The device is AEC-Q101 qualified and PPAP capable. Key electrical parameters include a drain-source voltage (BVDSS) of 20V, a continuous drain current (ID) of 2.11A at +25°C, and a maximum on-resistance (RDS(ON)) of 195mΩ at VGS=4.5V. Gate-source voltage is rated at ±8V, with a gate threshold voltage (VGS(TH)) ranging from 0.45V to 0.95V. Total gate charge (Qg) is typically 1.6nC.
Feature Summary
- AEC-Q101 qualified and PPAP capable for automotive use
- Ultra-small surface mount package with 1.3mm² footprint
- Low gate threshold voltage for efficient drive
- ESD protected gate structure
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard reel packaging configuration containing 3000 units per reel. Confirm that the 'Q' designation in the part number indicates compliance with AEC-Q101 standards and PPAP requirements. Ensure the component meets IATF16949:2016 manufacturing facility criteria if automotive change control protocols are required by the end application.
Selection Notes
Select this component when space constraints require an ultra-low profile surface mount solution. The dual channel configuration allows for independent control within a minimal footprint. Verify that the 20V breakdown voltage and 2.11A continuous current ratings align with the circuit's operational limits. Consider the low gate charge for high-speed switching efficiency in power management topologies.
Part Context
This component belongs to the DMN23 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. The 'Q' suffix specifically denotes automotive qualification status, distinguishing it from standard commercial variants. The X2-DFN1310-6 package provides a compact form factor suitable for dense PCB layouts in portable and automotive electronics.
Replacement Considerations
Direct replacements must match the X2-DFN1310-6 package dimensions and pinout. Verify that substitute parts meet or exceed the 20V BVDSS, 195mΩ RDS(ON), and AEC-Q101 qualification requirements. Check for identical thermal resistance characteristics to ensure reliable operation under similar load conditions.
