DMN2310U-13

$0.03

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b23ecfd9bf43 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2310U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310U-13

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：480mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2310U-13

DMN2310U-13

Single FETs, MOSFETs Overview

The DMN2310U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 1.6A at TA = +25°C. The device offers low on-state resistance, specified as 175mΩ max at VGS = 4.5V, 240mΩ max at VGS = 2.5V, and 360mΩ max at VGS = 1.8V. Gate threshold voltage ranges from 0.45V to 0.95V. Total gate charge is typically 0.7nC. Operating temperature range spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low gate threshold voltage for efficient drive capability
Fast switching speed with minimized on-state resistance
ESD protected gate structure

Single FETs, MOSFETs Applications

Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance and is halogen-free. Ensure the selected variant aligns with the required automotive or industrial qualification standards if applicable, as standard parts may differ from AEC-Q101 qualified versions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a compact SOT23 footprint with a 20V rating. Consider the RDS(ON) performance at specific gate voltages, particularly 1.8V or 2.5V, to ensure compatibility with low-voltage logic drivers. Evaluate thermal dissipation requirements against the junction-to-ambient thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to balance low conduction losses with high-speed switching performance. The DMN2310U specifically targets power management circuits where space constraints and efficiency are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout configurations and electrical ratings within the SOT23 package family.