DMN2500UFB4-7B

Description：MOSFET N-CH X2-DFN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:a7b9392e8eac Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2500UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH X2-DFN1006-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2500UFB4-7B

Description：MOSFET N-CH X2-DFN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.737 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：60.67 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：460mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2500UFB4-7B

DMN2500UFB4-7B

Single FETs, MOSFETs Overview

The DMN2500UFB4-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±6 V. The device offers a static drain-source on-resistance (R_DS(ON)) of 0.4 Ω at V_GS = 4.5 V with a continuous drain current (I_D) of 1 A, and 0.7 Ω at V_GS = 1.8 V with I_D of 0.8 A. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Features ultra-small surface mount package with ultra-low profile height of 0.4 mm maximum.
Includes ESD protected gate structure for enhanced reliability.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision and specific ordering suffixes when sourcing. Confirm that the X2-DFN1006-3 package dimensions match the target PCB footprint requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end product manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage power switching circuits requiring compact form factors. Evaluate thermal dissipation capabilities based on the specific copper area available on the printed circuit board. Consider the gate threshold voltage characteristics for compatibility with the driving logic levels in the target application design.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN1006-3 case style, which provides a small footprint suitable for space-constrained designs. The device is qualified to AEC-Q101 standards for automotive high reliability applications.