DMN2710UDW-13

Overview

The DMN2710UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±6 V. The device provides a continuous drain current (I_D) of 0.8 A at +25°C, with a maximum static drain-source on-resistance (R_DS(ON)) of 0.45 Ω at V_GS = 4.5 V and 0.6 Ω at V_GS = 2.5 V. Electrical characteristics include a gate threshold voltage (V_GS(TH)) ranging from 0.5 V to 1.0 V, an input capacitance (C_iss) of 42 pF, and a total gate charge (Q_g) of 0.6 nC. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT363 surface-mount package.

Feature Summary

• Dual N-channel configuration integrated into a single ultra-small surface mount package
• Optimized for low on-state resistance while maintaining superior switching performance
• Includes internal gate protection diode and ESD protection mechanisms
• Compliant with RoHS standards and free from halogen and antimony

Applications

• Battery operated systems
• Solid-state relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
• Power supply converter circuits

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantities and reel specifications. Ensure that the procurement channel is authorized to guarantee product authenticity and adherence to quality standards. Confirm compliance requirements such as RoHS and lead-free status prior to finalizing orders.

Selection Notes

Select this component for applications requiring compact dual N-channel switching solutions with low on-resistance. Evaluate thermal management capabilities based on the specified thermal resistance values and power dissipation limits. Ensure the operating voltage and current requirements align with the device's maximum ratings and electrical characteristics.

Part Context

The DMN2710UDW belongs to Diodes Incorporated's portfolio of advanced dual MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is packaged in an SOT363 case. The device is intended for surface-mount assembly and supports automated manufacturing processes.

Replacement Considerations

Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume compatibility with other dual MOSFET packages without verifying pinout and electrical parameter alignment.

FAQ

What is the maximum continuous drain current for the DMN2710UDW?

The maximum continuous drain current is 0.8 A at an ambient temperature of +25°C.

Does the DMN2710UDW include internal protection features?

Yes, the device includes an internal gate protection diode and is ESD protected.

What is the typical input capacitance of the DMN2710UDW?

The typical input capacitance (C_iss) is 42 pF, measured at V_DS = 16 V and V_GS = 0 V.