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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：42pF @ 16V
- Power - Max：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN2710UDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±6V. The device provides a continuous drain current (ID) of 0.8A at +25°C, with an on-state resistance (RDS(ON)) of 0.45Ω max at VGS = 4.5V and 0.6Ω max at VGS = 2.5V. Total gate charge (Qg) is typically 0.6nC. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 348°C/W steady state. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small surface mount package
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected and fully RoHS compliant
Applications
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation before purchase. The '-7' suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, as these are critical for final assembly processes.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Ensure the design accounts for the 20V BVDSS limit and the 0.8A continuous current capability at +25°C. Consider the thermal resistance of 348°C/W for heat dissipation planning in space-constrained PCB layouts.
Part Context
This part belongs to Diodes Incorporated's advanced generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It is housed in a SOT363 case, providing a compact footprint suitable for portable and battery-operated electronics where board space is limited.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters if considering alternative manufacturers.
