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DMN2710UFBQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DFN1006-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2710UFBQ-7
- Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：720mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
Single FETs, MOSFETs datasheet and documents for DMN2710UFBQ-7
Single FETs, MOSFETs Overview
The DMN2710UFBQ-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1006-3 package. It features a drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±6V. The device offers a maximum on-resistance (RDS(ON)) of 0.45Ω at VGS = 4.5V with a continuous drain current (ID) of 1.3A at +25°C. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Extremely compact footprint of 0.6mm², significantly smaller than standard SOT23 packages
- Low gate threshold voltage enabling efficient switching at low drive levels
- Integrated ESD protection on the gate terminal for enhanced reliability
- Qualified for automotive applications under AEC-Q101 standards
Single FETs, MOSFETs Applications
- Portable electronics power management
- Automotive electronic systems requiring specific change control
- High-efficiency battery-powered devices
Single FETs, MOSFETs Procurement Notes
Verify that the ordering suffix matches the required packing quantity, as the '7' suffix indicates a 3,000-unit tape and reel carrier. Confirm compliance requirements such as RoHS and halogen-free status directly against the manufacturer's latest documentation before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when board space is severely constrained due to its minimal 0.6mm² footprint. Ensure the application logic can provide sufficient gate drive voltage, as RDS(ON) performance varies significantly between 1.8V, 2.5V, and 4.5V thresholds. Verify thermal dissipation capabilities against the specified junction-to-ambient resistance values.
Single FETs, MOSFETs Part Context
This part belongs to the DMN27 series of ultra-small N-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is manufactured in IATF 16949 certified facilities. The product line emphasizes miniaturization while maintaining robust electrical characteristics suitable for modern portable and automotive circuits.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other X1-DFN1006-3 packaged N-channel MOSFETs with comparable 20V ratings and similar pinouts. Verify that any replacement maintains the same gate threshold voltage profile and on-resistance characteristics to ensure circuit compatibility.
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