DMN2991UDA-7B

$0.31

Description：MOSFET 2N-CH 20V 0.45A 6DFN
Series：-

SKU:90215f70c0f5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.45A 6DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：21.5pF @ 16V
Power - Max：310mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X2-DFN0806-6
Grade：-
Qualification：-

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DMN2991UDA-7B

Overview

The DMN2991UDA-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±8 V. The device provides a typical static drain-source on-resistance (R_DS(ON)) of 0.47 Ω at V_GS = 4.5 V, with a maximum continuous drain current (I_D) of 0.45 A at +25°C. Total power dissipation is rated at 0.31 W, and the junction-to-ambient thermal resistance is 404 °C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Ultra-small surface-mount package measuring 0.8mm x 0.6mm
Low on-resistance optimized for high-efficiency power management
Very low gate threshold voltage of 1.0V maximum
ESD protected gates integrated into the design

Applications

General purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official documentation to confirm tape and reel packaging quantities. Ensure compliance with RoHS directives and lead-free requirements as specified in the manufacturer's quality definitions before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require an X2-DFN0806-6 footprint. Evaluate the 0.45A continuous current limit and 0.31W power dissipation against the target circuit load. Confirm that the 20V breakdown voltage aligns with system operating conditions.

Part Context

This part belongs to the DMN2991UDA series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The product line targets applications requiring compact footprints and efficient power handling capabilities.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-referencing requires matching the X2-DFN0806-6 package, 20V V_DSS rating, and dual N-channel configuration to ensure functional compatibility.