DMN2992UFB4-7B

$0.12

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:134dcd376ab4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.41 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：15.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：380mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMN2992UFB4-7B

Overview

The DMN2992UFB4-7B is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a maximum drain-source voltage (VDSS) of 20V and a gate-source voltage (VGSS) of ±8V. The device provides a continuous drain current (ID) of 0.83A at +25°C, reducing to 0.66A at +70°C. Static drain-source on-resistance (RDS(ON)) is specified as 0.99Ω max at VGS=4.5V/ID=100mA, 1.2Ω max at VGS=2.5V/ID=50mA, and 1.8Ω max at VGS=1.8V/ID=20mA. Total power dissipation (PD) is 0.38W on minimum pads and 1.02W on FR-4 reference boards. Thermal resistance (RθJA) is 328°C/W and 122°C/W respectively. Operating temperature range spans -55°C to +150°C.

Feature Summary

Extremely compact footprint of 0.6mm², significantly smaller than standard SOT23 packages.
Low profile construction with a height of 0.4mm suitable for space-constrained designs.
Optimized for low on-state resistance while maintaining fast switching performance.
Integrated ESD protection and gate protection diode.

Applications

Load switches
High-efficiency power-management applications

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS, Halogen-free, and Antimony-free requirements if environmental compliance is mandatory for the target assembly. Ensure the design accommodates the X2-DFN1006-3 mechanical dimensions and recommended pad layout to achieve the specified thermal performance ratings.

Selection Notes

Select this component when board real estate is limited due to its minimal 0.6mm² footprint. Choose this part for applications requiring operation at low gate voltages, such as 1.8V or 2.5V logic levels, given its low threshold voltage characteristics. Consider the thermal constraints carefully, as the small package size results in high thermal resistance on standard PCBs without adequate copper area.

Part Context

This device belongs to the DMN2992 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the X2-DFN1006-3 surface-mount package. The product line focuses on providing high efficiency in power management circuits through minimized on-resistance and optimized switching dynamics within a miniature form factor.