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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 25A X2-TSN6025
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A (Ta)
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：3722pF @ 15V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, No Lead
- Supplier Device Package：X2-TSN6025-8
- Grade：-
- Qualification：-
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Overview
The DMN3003LCA8-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 16 A at 25°C. The device utilizes a low gate charge technology to facilitate efficient switching performance. It is housed in an SOT-323 surface-mount package, designed for compact circuit board layouts. The component operates within a junction temperature range of -55°C to 150°C and complies with RoHS standards for environmental safety.
Feature Summary
- N-channel enhancement mode construction for standard logic-level control applications
- Low gate charge characteristics to minimize switching losses and drive requirements
- Compact SOT-323 surface-mount package optimized for space-constrained designs
Applications
- DC-DC converter output stages
- Load switching circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against the manufacturer's latest datasheet before finalizing purchase orders. Confirm that the component meets all required environmental compliance standards for the intended deployment region. Ensure storage conditions adhere to moisture sensitivity level ratings to prevent package damage during assembly processes.
Selection Notes
Select this component when a 30 V rating and 16 A current capacity are required in a minimal footprint. Evaluate the thermal resistance parameters relative to the PCB copper area available for heat dissipation. Compare the gate charge specifications against the driving capability of the target controller IC to ensure adequate switching speed without excessive power loss.
Part Context
This part belongs to the DMN30xx series of N-channel MOSFETs from Diodes Incorporated. The series focuses on providing high current density in small packages suitable for portable electronics and battery-powered devices. The LCA8 suffix typically denotes specific packaging or testing variations within the broader product family.
Replacement Considerations
Direct replacements must match the 30 V Vdss, 16 A Id, and SOT-323 package dimensions. Verify pinout compatibility and thermal characteristics before substitution. Consult the manufacturer's cross-reference list for validated alternative part numbers.
