DMN3009LFV-13

$0.15

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fa98bfd5ca7e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 60A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMN3009LFV-13

Overview

The DMN3009LFV-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 60A at +25°C case temperature. The device achieves a low static drain-source on-resistance of 5.5mΩ at VGS=10V and 9.0mΩ at VGS=4.5V. Total gate charge is specified at 42nC at VGS=10V. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies significantly less board area than SO-8 packages.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by the design specifications. Ensure the PowerDI3333-8 footprint matches the PCB layout guidelines provided in the datasheet.

Selection Notes

Select this component when a compact N-channel MOSFET with low RDS(ON) is required for space-constrained designs. The PowerDI3333-8 package offers thermal advantages over traditional SO-8 footprints. Verify that the 30V rating and 60A current capacity align with the system's electrical requirements and operating temperature conditions.

Part Context

This part belongs to the DMN3009LFV series of 30V N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series utilizes silicon technology and is designed for high-efficiency power management. The 'DMN' prefix indicates an N-channel MOSFET configuration within the company's product lineup.

Replacement Considerations

The datasheet does not list official substitute part numbers. Cross-referencing requires matching the 30V rating, 60A current capability, 5.5mΩ RDS(ON), and PowerDI3333-8 package dimensions.