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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 9.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs：14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V
- Power - Max：2.16W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerLDFN
- Supplier Device Package：PowerDI3333-8 (Type D)
- Grade：-
- Qualification：-
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Overview
The DMN3013LFG-7 is a synchronous N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI3333-8 (Type D) surface-mount package and provides dual independent channels. The device supports a drain-source voltage of 30V with a maximum continuous drain current of 15A at 25°C case temperature. Static drain-source on-resistance is rated at 14.3mΩ at VGS=8V and 16.1mΩ at VGS=4.5V. Total gate charge is 5.7nC, and the component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual-channel configuration designed for high-efficiency power management applications
- Optimized structure minimizes on-state resistance while maintaining fast switching performance
- Manufactured using lead-free finish materials that are halogen and antimony free
Applications
- DC-DC Converters
- Power Management Functions
- Analog Switches
Procurement Notes
Verify authenticity through authorized distribution channels. Confirm RoHS compliance and green material status against current regulatory standards. Ensure storage conditions adhere to J-STD-020 moisture sensitivity level 1 requirements prior to soldering.
Selection Notes
Evaluate thermal resistance parameters for specific PCB copper pad layouts. Verify gate drive voltage compatibility with the specified threshold characteristics. Consider safe operating area limits when designing for pulsed current applications or inductive load switching scenarios.
Part Context
This component belongs to the DMN3013LFG series of synchronous MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type D) package technology, which integrates exposed die clips for improved thermal dissipation compared to traditional plastic packages.
Replacement Considerations
Cross-reference with other Diodes Incorporated dual N-channel MOSFETs in the PowerDI3333-8 package. Verify pinout compatibility and electrical parameter alignment before substitution.
FAQ
What is the maximum avalanche energy rating?
The device has an avalanche energy rating of 28mJ based on low-frequency testing with an inductance of 0.1mH.
Is the component suitable for high-temperature environments?
Yes, the operating and storage temperature range extends up to +150°C.
How is the gate charge characterized?
Total gate charge is 5.7nC measured at VDS=15V and ID=4A.
