DMN3018SFGQ-7

$0.14

Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d9d826d55813 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMN3018SFGQ-7

Overview

The DMN3018SFGQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30 V and a continuous drain current of 11.3 A. The device utilizes the PowerDI3333-8 surface-mount package, measuring 3.35 mm in length and width with a height of 0.8 mm. Key electrical parameters include a maximum on-resistance of 35 mΩ, a gate threshold voltage range of 1 V to 2.1 V, and a typical gate charge of 13.2 nC at 10 V. It supports a maximum power dissipation of 2.2 W and operates within a temperature range of -55 °C to +150 °C.

Feature Summary

Enhancement mode N-channel construction for efficient switching applications
Low on-resistance design to minimize conduction losses
Compact PowerDI3333-8 footprint optimized for high-density PCB layouts

Applications

DC-DC converter output stages
Load switching circuits
Power management modules

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning or tape-and-reel specifications. Ensure the component matches the required automotive or industrial qualification standards if applicable. Cross-reference the datasheet revision date to validate parameter accuracy before integration into final designs.

Selection Notes

Select this component when a low-voltage, high-current solution is required in a compact surface-mount form factor. Evaluate the thermal performance relative to the 2.2 W dissipation limit under expected operating conditions. Compare the gate charge characteristics against driver capabilities to ensure adequate switching speed without excessive drive current requirements.

Part Context

This part belongs to the DMN series of N-channel MOSFETs from Diodes Incorporated. It shares the PowerDI3333-8 package family with other devices like the DMN6069SFGQ-7 and DMN10H170SFGQ-7, offering a standardized footprint for various voltage and current ratings within the same manufacturer's portfolio.