DMN3020UFDF-13

$0.11

Description：MOSFET N-CH 30V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:940b2262c3ad Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：27 nC @ 8 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1304 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.03W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3020UFDF-13

Overview

The DMN3020UFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 15A at TC = +25°C. The device offers a low on-state resistance of 19mΩ at VGS = 4.5V and 25mΩ at VGS = 2.5V. Total gate charge is 27nC at VGS = 8V, with an input capacitance of 1304pF. It operates within a junction temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 (Type F) package.

Feature Summary

Designed for high efficiency power management applications
Features a 0.6mm profile suitable for low profile designs
Includes ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units per manufacturer specifications. Confirm that the U-DFN2020-6 (Type F) package dimensions align with the target PCB footprint layout. Ensure compliance with moisture sensitivity level 1 requirements during storage and handling processes.

Selection Notes

Select this component when a compact N-channel MOSFET with low on-resistance is required for space-constrained designs. The U-DFN2020-6 package provides a small PCB footprint of 4mm². Consider the thermal performance characteristics and the specific gate threshold voltage requirements for the intended drive circuitry before finalizing the design.

Part Context

This part belongs to the DMN3020 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The DMN3020UFDF variant specifically utilizes the U-DFN2020-6 package to support modern low-profile electronic assembly needs.