DMN3021LFDF-13

$0.10

Description：MOSFET N-CH 30V 11.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:cc8e0bff5d96 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 11.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：706 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.03W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMN3021LFDF-13

Overview

The DMN3021LFDF-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) package with a 0.6mm profile and a PCB footprint of 4mm². The device supports a drain-source voltage (V_DSS) of 30V and a gate-source voltage (V_GSS) of ±20V. At V_GS = 10V, the maximum on-resistance (R_DS(ON)) is 15mΩ at 7A, while at V_GS = 4.5V, it is 20mΩ at 7A. Continuous drain current reaches 9.3A at +25°C ambient temperature. Total power dissipation is rated at 2.03W at +25°C when mounted on an FR-4 substrate with a 1-inch square copper plate.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Features a low gate threshold voltage and fast switching speed characteristics.
Totally lead-free and fully RoHS compliant, halogen and antimony free.
Utilizes a 0.6mm profile case material classified as UL 94V-0 flammability rating.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically the halogen and antimony-free 'Green' device definition provided by the manufacturer. Ensure compatibility with the specified U-DFN2020-6 (Type F) mechanical dimensions and pad layout during the design-in phase.

Selection Notes

Select this component for designs requiring a compact form factor with a 4mm² PCB footprint. Evaluate thermal management requirements based on the 174 °C/W junction-to-ambient thermal resistance for standard layouts versus 64 °C/W for optimized copper plate mounting. Consider the 30V breakdown voltage and 9.3A continuous current limits relative to the target circuit load conditions.

Part Context

This part belongs to the DMN3021 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in the U-DFN2020-6 (Type F) package, which provides a low-profile solution suitable for space-constrained printed circuit board assemblies. The datasheet reference number for this component is DS37731 Rev. 3 - 2.

Replacement Considerations

Consult the manufacturer's documentation for qualified alternative packages or pin-compatible variants within the same product family. Verify electrical parameters against the original specifications before substituting any other discrete semiconductor components.