DMN3022LDG-7

$0.35

Description：MOSFET 2N-CH 30V 7.6A PWRDI3333
Series：-

SKU:0b7e56b021ec Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 7.6A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs：22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id：2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：481pF @ 15V, 996pF @ 15V
Power - Max：1.96W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：PowerDI3333-8 (Type D)
Grade：-
Qualification：-

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DMN3022LDG-7

Overview

The DMN3022LDG-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type D) surface-mount package. It features a 30V drain-source breakdown voltage and optimized on-resistance for high-efficiency power management. Q1 provides a maximum RDS(ON) of 22mΩ at VGS=5V and ID=10A, while Q2 offers a lower maximum RDS(ON) of 8mΩ under identical conditions. The device supports a continuous drain current of 15A at 25°C case temperature and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Dual synchronous configuration with asymmetric channel characteristics for optimized switching performance
Low input capacitance and fast switching speed to minimize dynamic losses
100% unclamped inductive switching (UIS) tested in production for enhanced ruggedness
RoHS compliant and halogen/antimony-free green device construction

Applications

DC-DC converters
Power management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix when sourcing components. The DMN3022LDG-7 designation indicates a tape and reel packaging format containing 1,000 units per reel. Confirm that the received parts match the PowerDI3333-8 physical dimensions and pinout requirements of the target PCB layout before assembly.

Selection Notes

Select this component for applications requiring a compact dual-N-channel solution with low total gate charge. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low on-resistance values. Evaluate thermal dissipation capabilities based on the 64°C/W junction-to-ambient resistance rating for the intended operating environment.

Part Context

This part belongs to the DMN3022LDG product family manufactured by Diodes Incorporated. It utilizes silicon technology and is designed specifically for surface-mount installation. The device integrates two independent N-channel MOSFETs into a single molded plastic package to save board space.

Replacement Considerations

The datasheet lists DMN3022LDG-13 as an alternative packaging option containing 3,000 units per reel. No other cross-model substitutes are documented in the official specifications.

FAQ

What is the difference between Q1 and Q2 in the DMN3022LDG?

Q1 has a higher on-resistance (max 22mΩ) and lower gate charge (max 3.7nC), while Q2 has a lower on-resistance (max 8mΩ) and higher gate charge (max 8nC). This asymmetry allows for optimized performance in synchronous rectification.