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Product Detailed Parameters
- Description：MOSFET N-CH 30V 6.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：608 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN3024LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage of 30V and a continuous drain current of 8.5A at 25°C. The device exhibits a maximum on-resistance of 24mΩ at VGS=10V and 36mΩ at VGS=4.5V. Operating within a temperature range of -55°C to +150°C, it utilizes an SOIC-8 surface-mount package with a power dissipation rating of 1.6W.
Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed performance
- RoHS compliant and halogen-free construction
Applications
- Motor control
- Backlighting
- DC-DC Converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel quantity as documented in the manufacturer's ordering information. Confirm that the component marking 'N3024LS' matches the intended part revision. Ensure procurement channels are authorized to maintain product integrity and traceability standards.
Selection Notes
Select this component when a low-profile SOIC-8 footprint is required for 30V N-channel switching applications. Evaluate thermal derating curves for PCB layout constraints, as power dissipation decreases significantly above 25°C ambient temperature. Consider gate charge specifications for driving requirements in high-frequency converter designs.
Part Context
This part belongs to the DMN3024 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching characteristics. The DMN3024LSS variant specifically denotes the SOIC-8 package configuration designed for surface mount technology assembly processes.
Replacement Considerations
Cross-reference with other Diodes Incorporated parts in the DMN3024 family for pin-compatible alternatives. Verify electrical parameters such as RDS(on) and VGS(th) against existing design requirements before substitution.
