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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：860mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3028L-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device supports a continuous drain current of 6.2A at +25°C, with a maximum pulsed drain current of 40A. Static drain-source on-resistance (RDS(ON)) is specified as low as 16mΩ at VGS=10V and ID=4.0A, or 25mΩ at VGS=4.5V and ID=3.5A. Total gate charge is typically 10.9nC at VGS=10V. Operating and storage temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Load Switch
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration in the SOT23 case. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as documented in the manufacturer's product definitions. Ensure the application environment remains within the specified thermal limits.
Selection Notes
Select this component when a compact single N-channel MOSFET is required for low-voltage applications up to 30V. The device offers a balance of low static resistance and fast dynamic performance suitable for space-constrained designs. Consider the thermal resistance characteristics and package limitations when designing for higher ambient temperatures or continuous high-current loads.
Part Context
This part belongs to the DMN3028 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT23 surface-mount package. The device is designed to minimize on-state resistance while maintaining superior switching performance for modern electronic systems.
Replacement Considerations
For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, and IATF 16949 manufacturing, consult the separate datasheet for the DMN3028LQ variant.
