DMN3028LQ-7

$0.48

Description：MOSFET BVDSS: 25V~30V,SOT23,T&R,
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1d8b81c92aae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V,SOT23,T&R,
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3028LQ-7

Overview

The DMN3028LQ-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a SOT23 package. It features a drain-source voltage of 30V and continuous drain currents up to 6.2A at 25°C. The device offers low on-resistance, specified as 25mΩ at VGS=10V and 28mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 0.8V to 1.8V, total gate charge of 10.9nC at VGS=10V, and input capacitance of 680pF. Operating temperatures span from -55°C to +150°C.

Feature Summary

Low on-resistance for efficient power handling
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified for automotive applications under AEC-Q101 standards

Applications

Load Switch
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets RoHS 3 compliance and halogen-free requirements if mandated by project specifications. Ensure the supplier provides traceability documentation suitable for IATF 16949 certified manufacturing environments.

Selection Notes

Select this component when a compact SOT23 footprint is required for low-voltage switching applications. Consider the thermal resistance values and power dissipation limits relative to the expected ambient temperature and PCB copper area. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure reliable turn-on and turn-off performance.

Part Context

This part belongs to the DMN3028LQ series of N-channel MOSFETs designed for automotive-grade reliability. It is manufactured in IATF 16949 certified facilities and supports PPAP requirements. The device utilizes advanced silicon technology to achieve low on-resistance within a standard surface-mount package.

Replacement Considerations

Check datasheets for alternative parts offering compatible pinouts and similar electrical characteristics. Verify that any substitute maintains the same AEC-Q101 qualification status and package dimensions to ensure mechanical interchangeability without redesigning the PCB layout.