DMN3060LWQ-13

$0.06

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c20fa8c9daca Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：395 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN3060LWQ-13

Overview

The DMN3060LWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 2.6A at +25°C. The device exhibits a low on-resistance (RDS(ON)) of 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Packaged in a SOT323-3 surface-mount format, it supports a junction temperature range from -55°C to +150°C with a total power dissipation of 0.5W.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards
Capable of PPAP submission for manufacturing process control
Manufactured in IATF16949:2016 certified facilities
Totally lead-free and fully RoHS compliant

Applications

General-purpose interfacing switches
Power-management functions
DC-DC converters
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required automotive qualification standards, including AEC-Q101 certification and PPAP capability, as these are critical for production integration. Ensure the SOT323 package dimensions align with the target PCB layout constraints.

Selection Notes

Select this component when a single N-channel MOSFET with a 30V rating is required for automotive-grade environments. The low gate charge and fast switching characteristics make it suitable for high-frequency power management applications. Verify that the thermal resistance and power dissipation limits accommodate the expected operating conditions within the specified temperature range.

Part Context

This part belongs to the DMN3060LWQ series of N-channel enhancement mode MOSFETs designed specifically for automotive use. It shares core electrical specifications with other variants in the family but differs in packaging and quantity configurations. The 'Q' suffix indicates its qualification for automotive reliability standards, distinguishing it from standard commercial grade devices.