ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3.3V, 10V
- Rds On (Max) @ Id, Vgs：59mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：233 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：770mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The DMN3061SQ is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 30V and a maximum continuous drain current of 2.9A at +25°C. The device offers a low on-resistance of 59mΩ at VGS=10V and 98mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C, with power dissipation capabilities of 0.77W in steady state. The component is housed in a SOT23 package.
Feature Summary
- Qualified to AEC-Q101 standards and supported by PPAP for automotive use
- Low on-resistance and input capacitance for efficient switching
- Fast switching speed with low input/output leakage currents
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- General-purpose interfacing switches
- Power-management functions
- Automotive electronic circuits requiring specific change control
Procurement Notes
Verify the part number suffix matches the required packing quantity, as the DMN3061SQ-13 indicates a 10,000-unit tape and reel configuration while other suffixes may differ. Confirm that the sourcing channel provides original manufacturer documentation to ensure compliance with IATF 16949 manufacturing standards. Check for any product change notifications or end-of-life notices prior to finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring AEC-Q101 qualification and automotive-grade reliability. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the thermal resistance characteristics and package limitations when determining heat dissipation needs in high-current applications.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It is specifically engineered to meet stringent automotive industry standards, distinguishing it from general-purpose transistors through its rigorous qualification processes and manufacturing certifications.
Replacement Considerations
Consult official substitution lists for equivalent parts. Verify pinout compatibility and electrical parameter alignment before replacing components in existing designs.
FAQ
Is the DMN3061SQ suitable for high-temperature automotive environments?
Yes, the device is qualified to AEC-Q101 standards and supports an operating junction temperature range from -55°C to +150°C.
What packaging options are available for this MOSFET?
The DMN3061SQ is available in a SOT23 package, with standard packing quantities including 3,000 units (suffix -7) and 10,000 units (suffix -13) in tape and reel format.
