ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.4A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Rds On (Max) @ Id, Vgs：60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 15V
- Power - Max：880mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
Download product information
Overview
The DMN3061SVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package with six pins. Key electrical parameters include a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 3.4A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 60mΩ at VGS=10V and 100mΩ at VGS=4.5V. Total gate charge (Qg) is 3.5nC at VGS=4.5V. Power dissipation reaches 0.88W on FR-4 substrate, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 package
- Minimized on-state resistance for high efficiency power management
- Superior switching performance with low input capacitance
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets specific environmental requirements such as halogen-free and antimony-free status if mandated by project specifications. Ensure compatibility with standard SMD/SMT assembly processes and check moisture sensitivity level ratings before storage and handling.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a TSOT26 footprint. Evaluate RDS(ON) values against load currents at intended gate drive voltages (4.5V or 10V). Consider thermal resistance characteristics and power dissipation limits relative to the PCB copper area and ambient operating conditions to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the DMN3061 series of dual N-channel enhancement mode MOSFETs. It shares similar electrical characteristics with other variants like the DMN3061SW-13 but differs in physical packaging. The TSOT26 case provides a compact solution suitable for space-constrained portable applications and dense circuit board layouts requiring dual channel functionality.
Replacement Considerations
DMN3061SVT-7
FAQ
What is the maximum continuous drain current for the DMN3061SVT?
The maximum continuous drain current is 3.4A at an ambient temperature of +25°C.
Does the DMN3061SVT support low-voltage gate driving?
Yes, it has a typical gate threshold voltage of 1.3V and an on-resistance of 100mΩ at VGS=4.5V.
What is the package type for the DMN3061SVT-13?
It uses a TSOT26 surface-mount package with six pins.
