DMN3066LVTQ-13

$0.09

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:48dfacdbbcdc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：328 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN3066LVTQ-13

Overview

The DMN3066LVTQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source breakdown voltage and a maximum on-resistance of 67mΩ at VGS=4.5V. The device supports a continuous drain current of 3.6A at +25°C and operates within a temperature range of -55°C to +150°C. Packaged in a TSOT26-6 configuration, it includes an ESD-protected gate and meets AEC-Q101 automotive qualification standards.

Feature Summary

Designed for automotive applications with AEC-Q101 qualification and PPAP capability.
Features low input capacitance and fast switching speed for efficient power management.
Includes an ESD protected gate structure to enhance reliability.

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the component meets IATF 16949 manufacturing facility requirements if strict automotive change control protocols are necessary for your supply chain.

Selection Notes

Select this component when a low-profile TSOT26 package is required for space-constrained designs. Ensure the application logic can drive the gate voltage sufficiently to achieve the specified low on-resistance values, particularly under varying load currents and junction temperatures.

Part Context

This part belongs to the DMN3066LVTQ series of N-channel MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications in demanding environments.

Replacement Considerations

The datasheet does not list official substitute part numbers. Verify pinout compatibility and electrical parameters against alternative suppliers before substitution.

FAQ

Is the DMN3066LVTQ-13 qualified for automotive use?

Yes, the device is qualified to AEC-Q101 standards and is supported by a PPAP, making it suitable for automotive applications requiring specific change control.