DMN3112SSS-13

Description：MOSFET N-CH 30V 6A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8aa9f6472e75 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 6A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：268 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN3112SSS-13

Overview

The DMN3112SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a maximum continuous drain current of 6.0A at +25°C ambient temperature. The device offers a low on-state resistance of 57mΩ at VGS=10V and 112mΩ at VGS=4.5V. Packaged in an SOP-8L case, it supports a total power dissipation of 2.5W with a thermal resistance of 50°C/W from junction to ambient.

Feature Summary

Designed for high-efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free and fully RoHS compliant, ensuring halogen and antimony-free operation.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the SOP-8L package dimensions align with the target PCB footprint requirements. Ensure compliance with moisture sensitivity level 1 per J-STD-020D standards during storage and handling procedures.

Selection Notes

Select this component when a 30V N-channel MOSFET with low gate threshold voltage is required. The device is suitable for applications demanding fast switching speeds and low input capacitance. Consider the 6.0A steady-state current capability and 2.5W power dissipation limits for thermal design purposes.

Part Context

This part belongs to the DMN3112SSS series of single N-channel enhancement mode MOSFETs. It utilizes silicon technology within an SOP-8L molded plastic case. The product marking includes the type code 'N3112SS' followed by date codes indicating assembly and test site information.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum pulsed drain current for the DMN3112SSS-13?

The maximum pulsed drain current (IDM) is specified as 24A, subject to a pulse width of less than or equal to 10μS and a duty cycle of less than or equal to 1%.