ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1A
- Rds On (Max) @ Id, Vgs：190mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：87pF @ 20V
- Power - Max：320mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The DMN3190LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers low on-state resistance, specified as a maximum of 190mΩ at VGS = 10V with ID = 1.3A, or 335mΩ at VGS = 4.5V with ID = 290mA. Continuous drain current reaches 1A at 25°C ambient temperature. Packaged in an SOT363 surface-mount case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a compact SOT363 package for space-constrained designs.
- Optimized for high efficiency power management through minimized on-state resistance and superior switching performance.
- Gate structure includes ESD protection mechanisms to enhance reliability during handling and operation.
Applications
- Motor Control
- Power Management Functions
- Load Switch
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free status before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required within a small footprint. Ensure the application voltage does not exceed the 30V BVDSS limit and verify that the gate drive voltage aligns with the RDS(ON) characteristics at either 4.5V or 10V thresholds.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities suitable for portable electronics and battery-powered applications requiring efficient power control.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet.
FAQ
What is the maximum continuous drain current for the DMN3190LDW?
The maximum continuous drain current is 1000 mA at an ambient temperature of +25°C and 900 mA at +70°C.
Does the DMN3190LDW include internal gate protection?
Yes, the device features an ESD protected gate design to safeguard against electrostatic discharge events.
What is the typical input capacitance of this MOSFET?
The typical input capacitance (Ciss) is 87 pF, measured at VDS = 20V, VGS = 0V, and f = 1.0MHz.
