DMN31D5UDA-7B

DMN31D5UDA-7B

$0.17
  • Description:MOSFET 2N-CH 0.4A 6DFN
  • Series:-

SKU:112fc8cef35b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 0.4A 6DFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:X2-DFN0806-6
  • Grade:-
  • Qualification:-

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DMN31D5UDA-7B

Overview

The DMN31D5UDA-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 400 mA at +25°C. The device offers low on-resistance, with RDS(ON) values ranging from 1.5 Ω to 4.5 Ω depending on the gate-source voltage (VGS). Key electrical parameters include a gate threshold voltage (VGS(TH)) of 0.4 V to 1.0 V, total gate charge (Qg) of 0.38 nC, and input capacitance (Ciss) of 22.6 pF. It operates within a temperature range of -55°C to +150°C and is housed in an X2-DFN0806-6 surface-mount package.

Feature Summary

  • Dual N-channel configuration designed for high-efficiency power management applications
  • Ultra-small X2-DFN0806-6 surface mount package measuring 0.8mm x 0.6mm
  • Low on-state resistance combined with fast switching speed
  • ESD protected gates with integrated protection diodes

Applications

  • General purpose interfacing switch
  • Power management functions
  • Analog switch

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated distributors or official channels. Confirm RoHS compliance and lead-free status against current regulatory standards. Ensure storage conditions adhere to moisture sensitivity level 1 requirements per J-STD-020. Validate ordering suffixes match specific packaging quantities before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring compact dual N-channel MOSFETs with low drive voltage capabilities. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance of 339 °C/W. Consider the low gate threshold voltage for compatibility with low-voltage logic controllers. Verify that the required drain current does not exceed the 400 mA limit under steady-state conditions.

Part Context

This part belongs to the DMN31D5UDA series of dual N-channel enhancement mode MOSFETs. It shares the same core semiconductor structure as other variants in the family but differs in packaging and tape-and-reel specifications. The -7B suffix indicates a specific 10,000-unit tape and reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Direct replacements must maintain the 30V VDS rating, dual N-channel topology, and X2-DFN0806-6 footprint. Verify equivalent RDS(ON) and Qg specifications to ensure identical switching performance. Cross-reference pin configurations to confirm D1, S1, G1, D2, S2, G2 alignment.

DMN31D5UDA-7BDMN31D5UDA-7B
$0.17
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