DMN31D6UT-13

$0.03

Description：MOSFET N-CH 30V 350MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:55aa0ef310f6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 350MA SOT523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：13.6 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：320mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN31D6UT-13

Overview

The DMN31D6UT-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 1.5Ω at VGS = 4.5V and 2.0Ω at VGS = 2.5V. Total gate charge (Qg) is typically 0.35nC, with turn-on delay time at 3.3ns and turn-off fall time at 4.4ns. Power dissipation reaches 320mW on high coverage copper PCBs. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
ESD protected gate structure
Qualified to AEC-Q101 standards for high reliability

Applications

Motor Control
Power Management Functions

Procurement Notes

Verify the component datasheet revision DS38191 Rev. 1-2 against the specific manufacturing lot date code markings. Confirm compliance with RoHS 2 and AEC-Q101 automotive reliability standards as documented in the official specifications. Ensure the SOT523 package dimensions match the required board layout constraints before finalizing procurement orders.

Selection Notes

Select this component for applications requiring low on-resistance combined with fast switching performance. The 30V rating suits low-voltage power management circuits. Verify that the 350mA continuous current capability meets the load requirements. Consider the thermal resistance characteristics when designing heat dissipation strategies for the SOT523 package.

Part Context

This part belongs to the DMN series of N-channel MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a compact SOT523 surface-mount package. The device is designed to minimize on-state resistance while maintaining superior switching performance, targeting high-efficiency power management applications.

Replacement Considerations

The DMN31D6UT-7 is a verified substitute offering identical electrical characteristics but packaged in 3,000 units per tape and reel instead of 10,000 units.