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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Rds On (Max) @ Id, Vgs：270mOhm @ 650mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 40µA
- Gate Charge (Qg) (Max) @ Vgs：3.07nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：161pF @ 15V
- Power - Max：760mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3270UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 1.6A at 25°C, with an on-resistance of 270mΩ at VGS=4.5V. Total gate charge is 3.07nC at VGS=4.5V. It utilizes a TSOT26 package and includes internal gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Optimized for low on-state resistance and fast switching performance
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Battery Management Systems
- Electric Vehicle power management circuits
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all required environmental compliance standards, including RoHS directives and halogen-free specifications, as defined in the datasheet.
Selection Notes
Evaluate the thermal resistance characteristics under actual PCB mounting conditions. Ensure the operating voltage and current requirements remain within the specified safe operation area limits. Consider the total gate charge when designing the driving circuitry for optimal switching efficiency.
Part Context
This component belongs to the DMN3270UVT series of dual N-channel MOSFETs from Diodes Incorporated. The product line focuses on minimizing on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Replacement Considerations
Consult the official datasheet for confirmed substitute part numbers. Verify pinout compatibility and electrical parameters before considering alternative components.
