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The DMN3270UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 1.6A at +25°C. The device offers a low on-resistance (RDS(ON)) of 270mΩ at VGS = 4.5V, with a gate threshold voltage (VGS(TH)) ranging from 0.35V to 0.9V. Total gate charge (Qg) is typically 3.07nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C, with power dissipation up to 1.08W on high-coverage PCBs.
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets RoHS 3 and AEC-Q101 standards if automotive or strict environmental compliance is required. Ensure the supplier provides traceability documentation consistent with Diodes Incorporated manufacturing records.
Select this component when a dual N-channel topology is needed within a small footprint. Evaluate thermal requirements carefully, as power dissipation depends heavily on PCB copper coverage. Verify that the 30V rating accommodates system voltage spikes and that the 1.6A current limit suits the load profile under expected operating temperatures.
This part belongs to the DMN series of MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching in low-voltage environments. The TSOT26 package allows for automated surface-mount assembly, supporting high-volume production needs.
No official substitutes are listed in the datasheet. When evaluating alternatives, ensure the replacement maintains the 30V BVDSS, dual N-channel configuration, and compatible TSOT26 pinout. Verify that RDS(ON) and Qg specifications meet or exceed the original design requirements.
The maximum continuous drain current is 1.6A at an ambient temperature of +25°C.
Yes, the DMN3270UVT is qualified to AEC-Q101 standards for high reliability.
The typical total gate charge is 3.07nC when measured at VGS = 4.5V and ID = 0.65A.