DMN3270UVT-7

DMN3270UVT-7

$0.12
  • Description:MOSFET 2N-CH 30V 1.6A TSOT26
  • Series:-

SKU:f1c3486b957a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 1.6A TSOT26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
  • Rds On (Max) @ Id, Vgs:270mOhm @ 650mA, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs:3.07nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:161pF @ 15V
  • Power - Max:760mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:TSOT-26
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN3270UVT-7

Overview

The DMN3270UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 surface-mount package. It features a drain-source breakdown voltage (BVDSS) of 30V and a maximum continuous drain current (ID) of 1.6A at +25°C. The device offers a low on-resistance (RDS(ON)) of 270mΩ at VGS = 4.5V, with a gate threshold voltage (VGS(TH)) ranging from 0.35V to 0.9V. Total gate charge (Qg) is typically 3.07nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C, with power dissipation up to 1.08W on high-coverage PCBs.

Feature Summary

  • Dual N-channel configuration integrated into a compact TSOT26 package for space-constrained designs.
  • Optimized for high efficiency through minimized on-state resistance while maintaining superior switching performance.
  • Includes internal gate protection diodes to enhance reliability against electrostatic discharge events.

Applications

  • Battery Management Systems
  • Electric Vehicle circuits
  • High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets RoHS 3 and AEC-Q101 standards if automotive or strict environmental compliance is required. Ensure the supplier provides traceability documentation consistent with Diodes Incorporated manufacturing records.

Selection Notes

Select this component when a dual N-channel topology is needed within a small footprint. Evaluate thermal requirements carefully, as power dissipation depends heavily on PCB copper coverage. Verify that the 30V rating accommodates system voltage spikes and that the 1.6A current limit suits the load profile under expected operating temperatures.

Part Context

This part belongs to the DMN series of MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching in low-voltage environments. The TSOT26 package allows for automated surface-mount assembly, supporting high-volume production needs.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, ensure the replacement maintains the 30V BVDSS, dual N-channel configuration, and compatible TSOT26 pinout. Verify that RDS(ON) and Qg specifications meet or exceed the original design requirements.

FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 1.6A at an ambient temperature of +25°C.

Is the device qualified for automotive applications?

Yes, the DMN3270UVT is qualified to AEC-Q101 standards for high reliability.

What is the typical total gate charge?

The typical total gate charge is 3.07nC when measured at VGS = 4.5V and ID = 0.65A.

DMN3270UVT-7DMN3270UVT-7
$0.12
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