DMN32D0LV-13

Overview

The DMN32D0LV-13 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a SOT563 surface mount package with a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 0.68A at +25°C. The device offers low on-state resistance, specified as 1.2Ω at VGS = 4.5V and 1.5Ω at VGS = 2.5V. Total power dissipation is rated at 480mW, with a thermal resistance junction-to-ambient of 261°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in an ultra-small SOT563 surface mount package
• Optimized for high efficiency power management through minimized on-state resistance
• Designed to maintain superior switching performance alongside low input capacitance
• Qualified to JEDEC standards for high reliability applications

Applications

• High efficiency power management circuits
• DC/DC converter designs requiring compact form factors
• Battery-powered portable electronic devices

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when sourcing components. Confirm that the procurement channel provides original manufacturer documentation to ensure authenticity. Check for RoHS compliance status and environmental declarations relevant to your manufacturing region before finalizing orders.

Selection Notes

Select this component for designs requiring dual N-channel MOSFETs within a minimal footprint. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Evaluate the thermal constraints carefully, as the small package size limits total power dissipation capabilities compared to larger packages.

Part Context

This part belongs to the DMN32D0LV series of dual N-channel enhancement mode field effect transistors. It is designed to provide low on-state resistance while maintaining fast switching speeds. The product line targets applications where space constraints are critical but efficient power handling is still required.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with Q-suffixes. Verify pinout compatibility and electrical parameters against alternative dual N-channel MOSFETs in the SOT563 package before substitution.