DMN3300U-7

$0.44

Description：MOSFET N-CH 30V 2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fd802618e5c2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：150mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：193 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

DMN3300U-7

Overview

The DMN3300U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and operates within a temperature range of -55°C to +150°C. The device provides a continuous drain current of 2A at 25°C, with a maximum on-resistance of 150mΩ at VGS=4.5V. Packaged in a surface-mount SOT23 case, it offers low gate threshold voltage and fast switching speed for efficient power management.

Feature Summary

Low on-state resistance for high efficiency
Fast switching speed capability
Qualified to AEC-Q101 standards
Totally lead-free and fully RoHS compliant

Applications

DC-DC Converters
Power Management Functions
Battery Operated Systems
Solid-State Relays
Drivers for Relays, Solenoids, Lamps, and Displays

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS31181 Rev. 5. Confirm that the ordering suffix '-7' corresponds to the specified 3000-unit tape and reel packaging. Ensure compliance with environmental requirements such as RoHS and halogen-free status before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a compact SOT23 package with a 30V breakdown voltage. Consider its low gate threshold voltage and fast switching characteristics for battery-operated systems. Evaluate thermal performance based on the specific PCB copper pad layout and ambient operating conditions.

Part Context

This part belongs to the DMN3300U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product utilizes a molded plastic 'Green' molding compound with UL flammability classification rating 94V-0.