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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.35A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：48pF @ 5V
- Power - Max：430mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN33D9LV-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT563 surface-mount package. It features a drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 350mA at +25°C. The maximum on-resistance (RDS(ON)) is specified as 2.4Ω at VGS=10V, 3.0Ω at VGS=4.5V, and 7.0Ω at VGS=2.5V. Total gate charge (Qg) reaches 1.23nC at VGS=10V. Operating temperature ranges from -55°C to +150°C with a power dissipation of 430mW.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- Low on-state resistance optimized for high efficiency
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm reel size and marking variations. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement. Ensure storage conditions align with J-STD-020 standards to prevent damage before soldering.
Selection Notes
Select this component for applications requiring dual N-channel control within a minimal footprint. Evaluate RDS(ON) performance at the specific operating gate voltage to ensure efficiency targets are met. Consider thermal constraints given the 430mW power dissipation limit in the SOT563 package.
Part Context
This device belongs to the DMN33 series of dual N-channel MOSFETs designed for low-voltage power management. It utilizes silicon technology and is housed in a molded plastic SOT563 case. The product is lead-free and halogen/antimony free, adhering to environmental directives.
Replacement Considerations
Check for pin-compatible alternatives within the same manufacturer's portfolio that match the 30V BVDSS and SOT563 form factor. Verify electrical parameters such as RDS(ON) and Qg to ensure equivalent switching performance. No official substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is 350mA at an ambient temperature of +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification or IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific controls.
What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) ranges from a minimum of 0.8V to a maximum of 1.4V under test conditions of VDS=3V and ID=100μA.
