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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN3401LV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device offers a typical static drain-source on-resistance (RDS(ON)) of 0.16Ω at VGS = 10V with an ID of 0.59A, and 0.22Ω at VGS = 4.5V with an ID of 0.2A. Maximum continuous drain current is 1.1A at +25°C for VGS = 10V, or 0.8A at VGS = 4.5V. Total power dissipation reaches 0.81W at +25°C on a minimum pad layout. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high efficiency power management applications
- Low input capacitance and fast switching speed characteristics
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant construction
Applications
- Motor controls
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format when sourcing components. Confirm that the SOT563 package marking 'BG3' matches the required identification for your assembly process. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures.
Selection Notes
Evaluate the RDS(ON) specifications against the intended gate drive voltage; performance differs significantly between 4.5V and 10V logic levels. Consider the thermal resistance values based on the actual PCB copper area, as power dissipation capabilities vary substantially between minimum pad layouts and larger heat-spreading designs.
Part Context
This component belongs to the DMN series of dual N-channel MOSFETs produced by Diodes Incorporated. It utilizes the SOT563 surface-mount package, which provides a compact footprint suitable for space-constrained printed circuit board designs. The device is engineered to minimize on-state resistance while maintaining superior switching performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternative components, ensure the replacement supports the 30V BVDSS requirement and fits within the SOT563 mechanical outline dimensions.
