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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3401LVQ-13 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of ±20V. The device offers a maximum continuous drain current (ID) of 1.1A at +25°C, with static drain-source on-resistance (RDS(ON)) specified as 0.4Ω max at VGS=10V and 0.7Ω max at VGS=4.5V. Total power dissipation (PD) reaches 0.81W on an FR-4 substrate. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low input capacitance for efficient switching
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Motor controls
- Power management functions
- DC-DC converters
- Backlighting
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity. The -13 suffix indicates a reel size of 13 inches with a packing quantity of 10,000 units. Confirm that the SOT563 package marking code BG3 aligns with your assembly requirements. Ensure compliance with IATF16949 manufacturing standards if strict automotive change control protocols are necessary for your production line.
Selection Notes
Select this component when a dual N-channel configuration in a compact SOT563 package is required for space-constrained designs. The low RDS(ON) values support efficient power handling in low-voltage environments. Verify that the 30V breakdown voltage meets the circuit's peak operating conditions. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-duty cycle applications.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. It shares the same core electrical specifications and package type as the DMN3401LDW-13 but utilizes the SOT563 footprint instead of the SOT-363. Both devices target similar low-power switching applications within the automotive and consumer electronics sectors.
Replacement Considerations
The DMN3401LDW-13 serves as a direct functional equivalent with identical electrical parameters but differs in physical package dimensions. When substituting, verify that the PCB land pattern accommodates the SOT563 outline. No other official cross-references are documented by the manufacturer.
