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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN1006
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMN3732UFB4-7 is a 30V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a maximum drain-source voltage (VDSS) of 30V and a continuous drain current (ID) of 1.3A at +25°C. The device offers low on-state resistance (RDS(ON)) of 460mΩ at VGS=4.5V and 730mΩ at VGS=1.8V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Ultra-low profile 0.4mm package with a 0.6mm² footprint for space-constrained designs
- Low gate threshold voltage enabling direct battery drive capability
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Portable applications
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7' against manufacturer documentation to confirm reel size and packing quantity details. Ensure compatibility with the X2-DFN1006-3 package dimensions during PCB layout. Confirm that the component meets all relevant environmental compliance standards required for your specific application region.
Selection Notes
Select this component when a compact form factor is critical due to its significantly smaller footprint compared to standard SOT23 packages. Consider the low RDS(ON) characteristics for efficiency in power management circuits. Evaluate the thermal performance based on the specific PCB copper area available for heat dissipation.
Part Context
This part belongs to the DMN37 series of advanced information MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is intended for high-efficiency power management applications where minimizing on-state resistance while maintaining superior switching performance is essential.
Replacement Considerations
Consult official datasheets for cross-reference options. Verify pinout compatibility and electrical parameters such as VDSS, ID, and RDS(ON) before substitution.
