DMN3732UVTQ-7

$0.07

Description：MOSFET 2N-CH 30V 1.1A TSOT26
Series：-

SKU:dfaab858dac5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 1.1A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V
Power - Max：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

Download product information

DMN3732UVTQ-7

Overview

The DMN3732UVTQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage (BVDSS) of 30V. The device provides continuous drain currents of 1.1A at +25°C and 0.9A at +70°C. Static drain-source on-resistance (RDS(ON)) ranges from 310mΩ to 730mΩ depending on the gate-source voltage and drain current conditions. Key electrical parameters include a gate threshold voltage between 0.45V and 0.95V, total gate charge of 0.9nC, and power dissipation capabilities up to 0.8W under specific thermal mounting conditions.

Feature Summary

Dual N-channel configuration in a compact TSOT26 package
Optimized for low on-state resistance and high-efficiency switching performance
Qualified for automotive applications with AEC-Q101 certification and PPAP capability
Manufactured using lead-free, halogen-free, and antimony-free green materials

Applications

Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official documentation. Confirm that the ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS directives and confirm suitability for intended operating temperatures before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a small surface-mount footprint. Evaluate the RDS(ON) specifications against the target gate drive voltage to ensure adequate conduction efficiency. Consider the thermal resistance values and PCB copper area requirements to maintain junction temperatures within safe operating limits during operation.

Part Context

This part belongs to the DMN3732UVTQ series of dual N-channel enhancement mode MOSFETs. It is designed as a next-generation solution to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management applications requiring compact packaging and robust automotive-grade reliability standards.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement device matches the TSOT26 package dimensions, maintains equivalent BVDSS and ID ratings, and possesses compatible RDS(ON) characteristics at the intended gate drive voltages.

FAQ

What is the maximum continuous drain current for the DMN3732UVTQ-7?

The maximum continuous drain current is 1.1A at an ambient temperature of +25°C and 0.9A at +70°C.

Is the DMN3732UVTQ-7 suitable for automotive applications?

Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.