DMN4026SSDQ-13

Overview

The DMN4026SSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of 40V and a gate-source voltage of ±20V. The device provides a continuous drain current of 7.0A at +25°C, with a maximum static drain-source on-resistance of 24mΩ at VGS=10V and 32mΩ at VGS=4.5V. Total gate charge reaches 19.1nC at VGS=10V. Thermal characteristics include a junction-to-ambient resistance of 98°C/W in steady state. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration designed for high-efficiency power management applications
• Optimized low on-state resistance combined with fast switching speed capabilities
• Totally lead-free and fully RoHS compliant construction
• Halogen and antimony free green device packaging

Applications

• Motor controls
• Backlighting systems
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications. Ensure the selected package type matches the intended PCB layout requirements. Validate thermal performance parameters against the final application's heat dissipation constraints.

Selection Notes

Select this component based on the required 40V drain-source voltage rating and the necessary continuous drain current capacity. Evaluate the on-resistance values at the specific gate drive voltages used in the circuit design. Consider the thermal resistance characteristics to ensure adequate heat dissipation within the specified operating temperature range. Verify compatibility with the target PCB footprint and soldering processes.

Part Context

This part belongs to the DMN4026SSD series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. These components are specifically designed for high-efficiency power management applications requiring compact surface-mount solutions.

Replacement Considerations

Consult the official datasheet for confirmed substitute part numbers. Verify electrical parameters such as breakdown voltage, on-resistance, and package dimensions before substitution. Ensure any replacement component meets the same thermal and environmental requirements as the original specification.

FAQ

What is the maximum continuous drain current at +25°C?

The maximum continuous drain current is 7.0A at an ambient temperature of +25°C.

What is the typical total gate charge at VGS = 10V?

The typical total gate charge is 19.1nC when measured at a gate-source voltage of 10V.

What is the operating temperature range for this device?

The operating and storage temperature range extends from -55°C to +150°C.