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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 5.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5.4A
- Rds On (Max) @ Id, Vgs：27mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：604pF @ 20V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN4027SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a continuous drain current of 5.4A at +25°C, rising to 7.1A under pulsed conditions. The device exhibits a static drain-source on-resistance of 27mΩ at VGS=10V and 47mΩ at VGS=4.5V. Gate threshold voltage ranges from 1.0V to 3.0V, with a total gate charge of 6.3nC at VGS=4.5V. Operating temperatures span from -55°C to +150°C, housed in an SO-8 package.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
- Qualified to AEC-Q101 standards for high reliability automotive applications.
- Totally lead-free and fully RoHS compliant, containing no intentionally added lead.
- Halogen and antimony free, classified as a green device.
Applications
- Motor Control
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard version is designated DMN4027SSD-13, while the automotive qualified variant uses the Q suffix (DMN4027SSDQ-13). Confirm compliance requirements against the datasheet notes regarding halogen and antimony content before finalizing procurement specifications.
Selection Notes
Select this component for low-voltage switching circuits requiring dual channel integration within an SO-8 footprint. Ensure thermal derating calculations account for the 1.25W power dissipation limit at +25°C ambient temperature. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal conduction losses.
Part Context
This part belongs to the DMN40 series of dual N-channel MOSFETs produced by Diodes Incorporated. It shares the SO-8 mechanical case and pinout configuration with other members of the family but differs in electrical ratings such as breakdown voltage and on-resistance. The product line targets compact power management solutions.
Replacement Considerations
The DMN4027SSDQ-13 serves as the direct automotive-grade equivalent with identical electrical characteristics. Cross-referencing with other dual N-channel MOSFETs requires verifying SO-8 pin compatibility and ensuring V(BR)DSS and RDS(on) parameters meet or exceed the original design requirements.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage is ±20V.
Is this component suitable for automotive applications?
Yes, the DMN4027SSDQ-13 variant is specifically qualified to AEC-Q101 standards for high reliability automotive use.
What is the typical forward transconductance?
The typical forward transconductance (gfs) is 22.8 S when measured at VDS = 15V and ID = 7A.
