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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN5010VAK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 280mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 3Ω at Vgs = 5V and Id = 50mA, with a gate threshold voltage (Vgs(th)) of 1V at Id = 250µA. Power dissipation is rated at 250mW, and the operating junction temperature range spans from -55°C to +150°C. The component is housed in an SOT-563 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Logic-level gate threshold voltage enabling direct drive from low-voltage logic
- Ultra-small SOT-563 surface-mount package for compact PCB layouts
Applications
- Battery-powered portable devices requiring low standby current
- Load switching in mobile communication equipment
- Power management circuits in consumer electronics
Procurement Notes
Verify the specific suffix 'AK-7' against official Diodes Incorporated documentation to confirm packaging type and tape-and-reel specifications. Ensure the procurement channel provides traceable origin data consistent with manufacturer standards. Cross-reference the full part number with authorized distributor catalogs to validate availability and authenticity before finalizing orders.
Selection Notes
Select this component when a dual N-channel MOSFET with 50V rating and 280mA current capacity is required in an SOT-563 footprint. Compare Rds(on) values at relevant gate voltages against alternative packages like SOT-23-6 or SC-70-6. Evaluate thermal performance constraints given the 250mW power dissipation limit in enclosed applications.
Part Context
This part belongs to the DMN5L series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series offers various voltage and current ratings within ultra-small surface-mount packages. The DMN5010VAK-7 specifically targets applications needing moderate current handling in minimal board space, complementing other variants like the DMN5L06DWK-7 which offers higher current capability.
Replacement Considerations
Direct substitutes include DMN5L06VAK-7 and DMN5L06VK-7 from the same manufacturer family. Verify pin compatibility and electrical parameter margins when considering cross-manufacturer alternatives. Ensure replacement parts maintain the SOT-563 package dimensions for mechanical fit.
