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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.41A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：410mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：42.4pF @ 25V
- Power - Max：490µW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN52D0UDMQ-7 is a dual MOSFET component manufactured by Diodes Incorporated, featuring one N-channel and one P-channel enhancement-mode transistor within a single SOT-26 package. The device utilizes silicon technology and is designed for surface-mount applications. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 41V to 60V. It supports standard reel, cut tape, and MouseReel packaging formats with a factory pack quantity of 3000 units.
Feature Summary
- Integrates complementary N-channel and P-channel enhancement-mode MOSFETs in a compact SOT-26 package
- Designed for surface-mount technology (SMD/SMT) installation
- Utilizes silicon semiconductor technology
Applications
- General-purpose switching applications requiring complementary channel configurations
- Low-voltage signal routing and level shifting circuits
- Power management modules in portable electronic devices
Procurement Notes
Verify the specific BVDSS rating required for the application, as public documentation indicates a range between 41V and 60V. Confirm that the SOT-26 package dimensions align with the target PCB footprint. Ensure compatibility with the intended surface-mount assembly process. Check current supply status, as availability may be restricted in certain regions.
Selection Notes
Select this component when a dual complementary MOSFET configuration is needed in a minimal footprint. The SOT-26 package offers space efficiency compared to discrete solutions. Consider the specified voltage range and silicon technology constraints. Verify that the thermal performance meets the system's power dissipation requirements under expected operating conditions.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It shares the SOT-26 package form factor with other components in the lineup but differs in internal channel configurations and voltage ratings. The product falls under the broader category of transistors and MOSFETs used in general electronics.
Replacement Considerations
Public data does not list official direct substitutes. When evaluating alternatives, ensure the replacement matches the SOT-26 package, contains both N-channel and P-channel enhancement modes, and meets or exceeds the 41V-60V breakdown voltage requirement. Verify pinout compatibility before implementation.
