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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.35A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：42.3pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN52D0UDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 350mA at 25°C, with an on-state resistance (RDS(ON)) of up to 4Ω at VGS=1.8V and 2Ω at VGS=5V. Packaged in a compact SOT363 surface-mount format, it includes integrated gate protection diodes for both channels.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Optimized low on-resistance for high-efficiency power management
- Very low gate threshold voltage enabling direct logic interface compatibility
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Level switches
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives and flammability ratings required for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology with integrated ESD protection is required. Ensure the application's gate drive voltage aligns with the specified RDS(ON) thresholds. Verify thermal dissipation requirements against the provided junction-to-ambient resistance values for the intended PCB layout.
Part Context
This part belongs to the DMN52D0UDW series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same electrical characteristics as the automotive-compliant variant DMN52D0UDWQ but follows standard commercial qualification standards. The device utilizes silicon technology housed in a molded plastic SOT363 package.
Replacement Considerations
No official substitutes are listed in the datasheet. When evaluating alternatives, verify matching pinout configurations, specifically the presence of internal gate protection diodes. Ensure replacement components meet or exceed the 50V breakdown voltage and 350mA continuous current ratings.
