DMN52D0UDWQ-13

Overview

The DMN52D0UDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT363 package. It features a drain-source voltage (BVDSS) of 50V and a maximum continuous drain current of 350mA at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 4.0Ω max at VGS=1.8V, 2.5Ω max at VGS=2.5V, and 2.0Ω max at VGS=5.0V. Key dynamic parameters include a total gate charge (Qg) of 1.5nC max at VGS=10V, input capacitance (Ciss) of 42.3pF, and turn-off delay time of 31ns. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration with integrated gate protection diodes for each channel.
• Qualified to AEC-Q101 standards with PPAP capability for automotive applications.
• Low gate threshold voltage (1.0V max) enabling efficient drive from low-voltage logic.
• Totally lead-free and fully RoHS compliant with halogen and antimony-free construction.

Applications

• Load switches
• Level switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format. Confirm that the component meets the required AEC-Q101 qualification and IATF 16949 manufacturing standards if intended for automotive use. Ensure the selected part number matches the exact electrical specifications and package dimensions required by the design.

Selection Notes

Select this component when a dual N-channel MOSFET with a 50V rating is required in a compact SOT363 footprint. Consider the RDS(ON) values at specific gate voltages (1.8V, 2.5V, 5.0V) to ensure compatibility with the system's drive voltage. Verify that the thermal resistance and power dissipation limits are sufficient for the expected operating conditions and duty cycles.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs manufactured by Diodes Incorporated. The 'DMN52D0UDWQ' designation indicates the specific electrical characteristics and package type, while the '-13' suffix denotes the tape and reel quantity of 10,000 units. It is designed for surface-mount assembly using standard SMD/SMT processes.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify that the replacement offers equivalent BVDSS, ID ratings, RDS(ON) at the target VGS, and SOT363 pinout compatibility. Ensure any substitute also meets AEC-Q101 requirements if used in automotive contexts.

FAQ

What is the maximum gate-source voltage allowed?

The maximum continuous gate-source voltage (VGSS) is ±12V.

Is the device suitable for high-temperature environments?

Yes, the operating and storage temperature range extends up to +150°C.

What is the typical input capacitance?

The typical input capacitance (Ciss) is 42.3pF at VDS=25V and VGS=0V.