DMN53D0U-13

$0.03

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5e19fc045e00 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：37.1 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN53D0U-13

Overview

The DMN53D0U-13 is a single N-channel enhancement mode MOSFET in an SOT23 package. It features a drain-source voltage of 50V and continuous drain current of 300mA at +25°C. The on-resistance is 2Ω at VGS=5V and 2.5Ω at VGS=2.5V. Gate-source voltage is ±12V, with a threshold voltage range of 0.4V to 1.0V. Total gate charge is 0.6nC. Operating temperature spans -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features very low gate threshold voltage and low input capacitance for efficient drive requirements.
Includes ESD protection and meets AEC-Q101 standards for high reliability automotive applications.

Applications

High efficiency power management circuits
Automotive electronic systems requiring AEC-Q101 qualified components

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the manufacturer's documentation. Ensure the application environment remains within the rated thermal and electrical limits defined in the datasheet.

Selection Notes

Select this component when a single N-channel MOSFET with a 50V rating and 300mA continuous current capability is required. The device is suitable for designs needing low on-resistance at standard logic gate voltages. Consider the SOT23 package size and thermal characteristics for space-constrained PCB layouts.

Part Context

This part belongs to the DMN53 series of N-channel enhancement mode field effect transistors manufactured by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching speeds in compact surface-mount packages for portable and automotive electronics.